Out-diffusion of Zn from Si: A method to study vacancy properties in Si.
| Autor: | Giese, A., Bracht, H., Stolwijk, N.A., Walton, J.T. |
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| Zdroj: | Journal of Applied Physics; 6/15/1998, Vol. 83 Issue 12, p8062, 3p, 1 Chart, 3 Graphs |
| Abstrakt: | Reports on the out-diffusion experiments of Zn from homogeneously Zn-doped silicon samples which were performed at 16 1107 ...C. Analysis of Zn-out diffusion; Yields of Zn profiles; Conclusion reached on the experiment. |
| Databáze: | Complementary Index |
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