| Autor: |
Pradhan, Anshu A., Shah, S. Ismat, Unruh, Karl M. |
| Předmět: |
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| Zdroj: |
Review of Scientific Instruments; Nov2002, Vol. 73 Issue 11, p3841, 5p |
| Abstrakt: |
Reactive sputtering allows deposition of insulating compounds that cannot be easily prepared using conventional dc sputtering methods. However, this technique suffers from problems related to the poisoning of the target and associated hysteresis effects. In addition, the operating conditions that yield the highest growth rate are unstable, and feedback control is required to maintain the system at the optimal operating point. In order to address some of these issues, we have developed a new hollow cathode sputtering (HCS) source. In addition to the inherent advantages of high deposition rates and the capability for coating complex surfaces, we have found that the hollow cathode sputtering source does not exhibit the hysteresis behavior generally observed in planar reactive sputtering systems and is stable at all operating points without feedback control. We have characterized a HCS source for reactively depositing alumina thin films. The deposition rate increases on increasing the oxygen concentration. Pure alumina thin films can be deposited with high growth rates at very low-power densities. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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