Design and surface chemistry of nonalloyed ohmic contacts to pseudomorphic InGaAs on n+GaAs.

Autor: Wakita, Arlene, Moll, Nick, Fischer-Colbrie, Alice, Stickle, William
Předmět:
Zdroj: Journal of Applied Physics; 9/15/1990, Vol. 68 Issue 6, p2833, 6p, 2 Charts, 3 Graphs
Abstrakt: Examines the pseudomorphic layers of molecular-beam-epitaxy grown indium-gallium-arsenic and on heavily doped gallium arsenide. Use of x-ray photoelectron spectroscopy; Findings of the Hall-effect measurements; Contacts to buried layers and their surface chemistry.
Databáze: Complementary Index