| Autor: |
Sydor, Michael, Jahren, Neal, Mitchel, W. C., Lampert, W. V., Haas, T. W., Yen, M. Y., Mudare, S. M., Tomich, D. H. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 6/15/1990, Vol. 67 Issue 12, p7423, 7p, 1 Diagram, 11 Graphs |
| Abstrakt: |
Presents a study that examined photoreflectance (PR) of aluminum-gallium-arsenic alloy (AlGaAs) in simple epilayers and high-electron-mobility transistors. Analysis of the PR estimates of the doping levels of the alloy; Evaluation of the PR characteristics from gallium arsenide (GaAs)/aluminum-gallium-arsenic alloy interfaces; Examination of the laser-illuminated undoped GaAs/doped AlGaAs interface. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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