| Autor: |
Baier, H.-U., Mönch, W. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 7/15/1990, Vol. 68 Issue 2, p586, 5p |
| Abstrakt: |
Presents information on a study which prepared Al[subx]N[sub1-x] films on gallium arsenide(110) surfaces at room temperature by simultaneous evaporation of aluminum and exposure to a beam of ammonia molecules. Chambers of the photoelectron spectrometer; Evaluation of the minimum flux density of ammonia; Formation of aluminum nitride. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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