| Autor: |
Theunissen, M. J. J., van de Nieuwenhoff, R. P. M. L. C., Kuiken, H. K. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 7/15/1990, Vol. 68 Issue 2, p806, 8p, 11 Graphs |
| Abstrakt: |
Presents a study which calculated the temperature profiles for a three layer stack of SiO[sub2]-Si-SiO[sub2] on top of a monocrystalline silicon substrate. Model for calculating temperature distribution; General requirement for the three-layer structure; Comparison of calculation and experiment results. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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