Correlation between the photoreflectance impurity peak in semi-insulating GaAs and the bulk acceptor concentration.

Autor: Brierley, Steven K., Lehr, Deborah S.
Předmět:
Zdroj: Journal of Applied Physics; 4/15/1990, Vol. 67 Issue 8, p3878, 3p, 1 Chart, 2 Graphs
Abstrakt: Presents a study which measured the strength of the first-derivative peak observed below the band gap in photoreflectance (PR) spectra of semi-insulating gallium arsenide. Measurement of the PR spectrum; Correlation between the strength of the impurity peak and bulk net acceptor concentration; Information on the impurity peak in the PR spectra.
Databáze: Complementary Index