| Autor: |
Ashby, C. I. H., Myers, D. R., Vawter, G. A., Biefeld, R. M., Datye, A. K. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 9/1/1990, Vol. 68 Issue 5, p2406, 5p, 1 Chart, 3 Graphs |
| Abstrakt: |
Presents a study which examined the selective suppression of photochemical dry etching using elevated surface impurity concentrations. Details on the experiment; Information on the relative magnitudes of the quantum yields of original substrate materials; Calculation of the steady-state hole concentration under illumination. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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