Analysis of the hysteresis in the I-V characteristics of vertically integrated, multipeaked resonant-tunneling diodes.

Autor: Kuo, Tai-Haur, Lin, Hung C., Potter, Robert C., Shupe, Dave
Předmět:
Zdroj: Journal of Applied Physics; 9/1/1990, Vol. 68 Issue 5, p2496, 3p, 4 Diagrams, 1 Graph
Abstrakt: Presents a study that examined the current-voltage characteristics of vertically integrated, multipeaked resonant-tunneling diodes. Background on resonant-tunneling diode; Methodology; Analysis of the hysteresis in the current-voltage characteristics.
Databáze: Complementary Index