| Autor: |
Hanak, Thomas R., Ahrenkiel, Richard K., Dunlavy, Donald J., Bakry, Assem M., Timmons, Michael L. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 5/1/1990, Vol. 67 Issue 9, p4126, 7p, 2 Charts, 8 Graphs |
| Abstrakt: |
Presents a study that proposed a method to analyze digitally recorded capacitive transients for deep level spectroscopy of semiconductors. Methodology; Background on deep-level transient spectroscopy; Application of the proposed method in aluminum-gallium arsenide semiconductors. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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