| Autor: |
Li, Jian, Hong, Q. Z., Mayer, J. W., Rathbun, Lynn |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 3/1/1990, Vol. 67 Issue 5, p2506, 6p, 11 Charts, 1 Graph |
| Abstrakt: |
Focuses on a study which examined the sequential formation and dissociation of compounds in the nickel (Ni)/germanium (Ge)/silicon (Si) (100) system using Rutherford backscattering spectroscopy. Interdiffusion between silicon and germanium; Formation of NiGe/NiSi/Si (100); Growth of nickel and silicon. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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