Anodic oxidation of AlGaAs and detection of the AlGaAs-GaAs heterojunction interface.

Autor: Fischer, C. W., Teare, S. W.
Předmět:
Zdroj: Journal of Applied Physics; 3/1/1990, Vol. 67 Issue 5, p2608, 5p, 7 Graphs
Abstrakt: Provides information on a study concerning the anodic oxidation of n-type aluminum (Al) gallium (Ga) arsenic (As) and AlGaAs/GaAs heterojunctions in acid-glycol-water electrolytes. Assessment of the real-time derivative spectra of AlGaAs epitaxial layer; Derivative results of epitaxial layers.
Databáze: Complementary Index