| Autor: |
Pinzone, C. J., Gerrard, N. D., Dupuis, R. D., Ha, N. T., Luftman, H. S. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 6/1/1990, Vol. 67 Issue 11, p6823, 7p |
| Abstrakt: |
Describes results of a study of the use tetraethyltin as a dopant source in the metalorganic chemical vapor deposition growth of indium phosphide and InGaAs and the realization of heavily doped n-type epitaxial layers. Crystal growth and characterization; Results and discussion; Conclusions. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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