Aluminum-nitrogen isoelectronic trap in silicon.

Autor: Modavis, R. A., Hall, D. G.
Předmět:
Zdroj: Journal of Applied Physics; 1/1/1990, Vol. 67 Issue 1, p545, 3p, 1 Chart, 2 Graphs
Abstrakt: Presents a study which examined the assumption that the A, B, C luminescence system from silicon originated with the radiative decay of an exciton bound to an isoelectronic trap. Characteristics of the system; Information on the no-phonon line; Correlation between the strength of the isoelectronic bound-excitons emission from the center and the carbon concentration in the sample.
Databáze: Complementary Index