| Autor: |
Bisberg, J. E., Chin, A. K., Dabkowski, F. P. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2/1/1990, Vol. 67 Issue 3, p1347, 5p, 1 Black and White Photograph, 4 Graphs |
| Abstrakt: |
Presents a study that evaluated the diffusion of zinc in several semiconductors. Analysis of zinc diffusion in gallium arsenide (GaAs) semiconductor; Examination of the diffusion of zinc in aluminum-GaAs semiconductor; Assessment of the diffusion of zinc in GaAs-phosphorus semiconductor. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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