| Autor: |
Turco, F. S., Sandroff, C. J., Hwang, D. M., Ravi, T. S., Tamargo, M. C. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 8/1/1990, Vol. 68 Issue 3, p1038, 5p |
| Abstrakt: |
Presents a study which examined high-quality molecular-beam epitaxial (MBE) regrowth of (Al[sub5]Ga)As on gallium arsenide (GaAs). Method used in high-quality MBE regrowth; Experiment on the regrowth of gallium arsenide surface; Summary of the surface reconstruction observed by reflection high-energy electron diffraction during the regrowth of GaAs. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
