| Autor: |
Goguenheim, Didier, Vuillaume, Dominique, Vincent, Gilbert, Johnson, Noble M. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 8/1/1990, Vol. 68 Issue 3, p1104, 10p, 9 Graphs |
| Abstrakt: |
Presents a study which reported a measurement technique and analysis for the accurate determination of the capture cross sections of the interface states in metal-oxide-semiconductor structures. Overview of studies on energy-resolved deep level transient spectroscopy (ERDLTS); Analysis of the charge potential feedback system; Details on the ERDLTS trap-filing experiments. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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