| Autor: |
van den Heuvel, J. C., Geerts, M. J., Metselaar, J. W. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 8/1/1990, Vol. 68 Issue 3, p1381, 3p, 5 Graphs |
| Abstrakt: |
Presents a study which determined the diffusion length in hydrogenated amorphous silicon (a-Si:H) using the surface photovoltage (SVP) technique. Characteristics of the SPV; Diffusion equation used in obtaining the diffusion length in crystalline semiconductors; Details on the equation for a-Si:H; Description of the difference between the hole drift mobility and electron drift mobility. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
