A deep-level transient spectroscopy technique for the characterization of charge-carrier emission centers in nonabrupt p-n junctions.
| Autor: | Andersson, Gert I., Engström, Olof |
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| Zdroj: | Journal of Applied Physics; 4/1/1990, Vol. 67 Issue 7, p3500, 11p, 8 Diagrams, 4 Charts, 4 Graphs |
| Abstrakt: | Demonstrates a general method for analyzing the properties of deep impurities in the space-charge regions of p-n junctions. Basis of the deep-level transient spectroscopy; Cases which the method is applicable; Thermal emission rates from the transient data. |
| Databáze: | Complementary Index |
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