Demands of Transport Modeling in Advanced MOSFETs.

Autor: Sverdlov, Viktor
Zdroj: Strain-induced Effects in Advanced Mosfets; 2011, p169-237, 69p
Abstrakt: Integrated circuits (IC) play a key role in modern digital information society. Superior computational performance is achieved by making transistor faster and assembling more and more elements on a chip, This is achieved by scaling the MOSFET size down. In the past decade the minimum feature size of transistor has been successfully reduced which allowed to double the number of transistors on a chip every second year. This trend is expected to continue in the next decade, as predicted and institutionalized by the International Technology Roadmap for Semiconductors(1) and supported by demonstration of MOSFETs with the gate length as short as 6nm(28). [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index