Elastic strain relaxation in GaN–AlN–GaN semiconductor–insulator–semiconductor structures.
| Autor: | Bykhovski, A. D., Gelmont, B. L., Shur, M. S. |
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| Zdroj: | Journal of Applied Physics; 9/15/1995, Vol. 78 Issue 6, p3691, 6p |
| Abstrakt: | Presents a study that examined elastic strain relaxation in GaN-AIN-GaN seemiconductor-insulator-semiconductor structures. Method of the study; Results and discussion; Conclusion. |
| Databáze: | Complementary Index |
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