| Autor: |
Lyakas, M., Arazi, T., Eizenberg, M., Demuth, V., Strunk, H. P., Mosleh, N., Meyer, F., Schwebel, C. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 10/15/1995, Vol. 78 Issue 8, p4975, 7p, 3 Black and White Photographs, 2 Charts, 3 Graphs |
| Abstrakt: |
Deals with a study which examined the structural properties of silicon germanium layers epitaxially grown on silicon by ion beam sputter deposition. Experimental procedures; Effect of growth temperature on the epilayers properties; Temperature dependence of surface topology. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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