| Autor: |
Pérez-Rodríguez, A., Romano-Rodríguez, A., Cabezas, R., Morante, J. R., Jawhari, T., Hunt, C. E. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 11/15/1996, Vol. 80 Issue 10, p5736, 6p, 2 Charts, 6 Graphs |
| Abstrakt: |
Presents a study which analyzed the effect of stress and composition on the Raman spectra of etch-stop SiGeB layers. Observations from the Raman spectroscopy method; Effect of stress on the Fano interaction parameters of the first-order silicon-silicon Raman line; Experimental details. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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