Growth mode of epitaxial Si0.5Ge0.5 layer grown on Si(100) by ion-beam-assisted deposition.
| Autor: | Park, S. W., Shim, J. Y., Baik, H. K. |
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| Zdroj: | Journal of Applied Physics; 11/15/1995, Vol. 78 Issue 10, p5993, 7p, 6 Black and White Photographs, 1 Diagram, 5 Graphs |
| Abstrakt: | Focuses on a study which investigated the nucleation and growth of silicon[sub0.5] germanium[sub0.5] alloy layer on silicon substrate. Experimental procedures; Composition homogeneity of germanium; Analysis of the epitaxial growth layer on silicon. |
| Databáze: | Complementary Index |
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