Analysis of lattice defects induced by ion implantation with photo-acoustic displacement measurements.

Autor: Sumie, Shingo, Takamatsu, Hiroyuki, Morimoto, Tsutomu, Nishimoto, Yoshiro, Kawata, Yutaka, Horiuchi, Takefumi, Nakayama, Hiroshi, Kita, Takashi, Nishino, Taneo
Předmět:
Zdroj: Journal of Applied Physics; 11/15/1994, Vol. 76 Issue 10, p5681, 9p, 1 Diagram, 1 Chart, 12 Graphs
Abstrakt: Focuses on a study which analyzed subsurface lattice defects in silicon induced by ion implantation. Experimental setup; Results and discussions; Conclusions.
Databáze: Complementary Index