Analysis of lattice defects induced by ion implantation with photo-acoustic displacement measurements.
Autor: | Sumie, Shingo, Takamatsu, Hiroyuki, Morimoto, Tsutomu, Nishimoto, Yoshiro, Kawata, Yutaka, Horiuchi, Takefumi, Nakayama, Hiroshi, Kita, Takashi, Nishino, Taneo |
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Zdroj: | Journal of Applied Physics; 11/15/1994, Vol. 76 Issue 10, p5681, 9p, 1 Diagram, 1 Chart, 12 Graphs |
Abstrakt: | Focuses on a study which analyzed subsurface lattice defects in silicon induced by ion implantation. Experimental setup; Results and discussions; Conclusions. |
Databáze: | Complementary Index |
Externí odkaz: |