Efficiency of TiN diffusion barrier between Al and Si prepared by reactive evaporation and rapid thermal annealing.

Autor: Gagnon, G., Currie, J. F., Brebner, J. L., Darwall, T.
Předmět:
Zdroj: Journal of Applied Physics; 5/15/1996, Vol. 79 Issue 10, p7612, 9p, 4 Charts, 8 Graphs
Abstrakt: Presents a study that tested TiN layers prepared by creative evaporation and rapid thermal annealing for the diffusion of aluminum and silicon. Methodology; Results; Discussion.
Databáze: Complementary Index