| Autor: |
Lin, H. T., Rich, D. H., Sjölund, O., Ghisoni, M., Larsson, A. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 5/15/1996, Vol. 79 Issue 10, p8015, 9p, 2 Black and White Photographs, 2 Diagrams, 9 Graphs |
| Abstrakt: |
Presents information on a study which analyzed the influence of structural defects on the spatial variation of radiative and nonradiative recombination in an indium gallium (Ga) arsenic (As)/aluminum GaAs/GaAs heterojunction phototransistor. Experimental procedure; Results and discussion; Conclusion. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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