Photon-assisted oxidation of the GaAs(100) surface using water at 90 K.
| Autor: | Ettedgui, E., Park, Ken T., Cao, Jianming, Gao, Y., Ruckman, M. W. |
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| Zdroj: | Journal of Applied Physics; 5/15/1995, Vol. 77 Issue 10, p5411, 7p, 1 Chart, 5 Graphs |
| Abstrakt: | Presents a study that examined the interaction of water with gallium arsenide (100) semiconductor using photoelectron spectroscopy. Methodology; Analysis of the energy distribution curves of the interaction; Assessment of the condensation of water in the semiconductor. |
| Databáze: | Complementary Index |
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