Analysis of the offset voltage of InGaP/GaAs single-, double-, and composite double-heterojunction bipolar transistors.

Autor: Fresina, Michael T., Hartmann, Quesnell J., Ahmari, David A., Gardner, Nathan F., Stillman, Gregory E.
Předmět:
Zdroj: Journal of Applied Physics; 5/15/1995, Vol. 77 Issue 10, p5437, 3p, 2 Charts, 2 Graphs
Abstrakt: Presents a study that investigated the common-emitter offset voltages in several double-heterojunction bipolar transistors. Correlation between the physical mechanisms behind the variations in the offset voltage and the base current of the samples; Methodology; Comparison of the common-emitter voltage-current characteristics of the samples.
Databáze: Complementary Index