Study of C2F6 overetch induced damage and the effects of overetch on subsequent SiCl4 etch of GaAs/AlGaAs.

Autor: Ooi, B. S., Hicks, S. E., Bryce, A. C., Wilkinson, C. D. W., Marsh, J. H.
Předmět:
Zdroj: Journal of Applied Physics; 5/15/1995, Vol. 77 Issue 10, p4961, 6p
Abstrakt: Deals with the use of a quantum well intermixing probe system to study a damage in gallium arsenide/aluminum gallium arsenide due to exposure to carbon[sub2] fluorine[sub6] plasmas. Dependence of photoluminescence energy shift after rapid thermal processing on radio frequency power; Experimental details and result of the study.
Databáze: Complementary Index