Passivation of surface and bulk defects in p -GaSb by hydrogenated amorphous silicon treatment.

Autor: Dutta, P. S., Sreedhar, A. K., Bhat, H. L., Dubey, G. C., Kumar, Vikram, Dieguez, E., Pal, U., Piqueras, J.
Předmět:
Zdroj: Journal of Applied Physics; 3/15/1996, Vol. 79 Issue 6, p3246, 7p, 2 Black and White Photographs, 1 Chart, 7 Graphs
Abstrakt: Deals with a study which discussed the photoluminescence and cathodluminescence properties of a-Si:H treated undoped and tellurium-compensated p-GaSb. Background to the study; Experimental details; Results and discussion.
Databáze: Complementary Index