Growth and interfacial chemistry of insulating (100) barium fluoride on gallium arsenide.

Autor:	Stumborg, M. F., Santiago, F., Chu, T. K., Price, J. L., Leibowitz, J. R.
Předmět:	GALLIUM arsenide EPITAXY THIN films PHOTOELECTRON spectroscopy CHEMICAL reactions
Zdroj:	Journal of Applied Physics; 3/15/1995, Vol. 77 Issue 6, p2739, 6p
Abstrakt:	Investigates the epitaxial growth of insulating BaF[sub2] films on (100) and (111)-oriented gallium arsenide (GaAs) substrates. Preparation of the substrates; Purpose of x-ray photoelectron spectroscopy; Data on film deposition; Information on surface chemical reaction.
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu