| Autor: |
Revenant-Brizard, C., Regnard, J. R., Solmi, S., Armigliato, A., Valmorri, S., Cellini, C., Romanato, F. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 6/15/1996, Vol. 79 Issue 12, p9037, 6p, 2 Charts, 3 Graphs |
| Abstrakt: |
Focuses on a study on the local atomic environment of the antimony dopant in silicon wafers by near grazing incidence fluorescence extended x-ray absorption fine structure (EXAFS). Periods of high temperature performed for annealing; Effects of the antimony diffusion; Structural parameters obtained from the EXAFS spectra. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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