| Autor: |
Schulte, D., Subramanian, S., Ungier, L., Arthur, J. R. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 7/15/1995, Vol. 78 Issue 2, p1210, 4p, 1 Diagram, 2 Graphs |
| Abstrakt: |
Discusses a study which detailed photoluminescence results from a novel modulation doped AlGaAs/ low-temperature molecular beam epitaxially-grown-GaAs (LT-GaAs MODFET) heterostructure. Properties observed in all the LT-GaAs MODFET structures; Content of the LT-GaAs as-grown; Way in which the samples used were grown; Factor that gives rise to a negative space charge region on the LT-GaAs side of the heterojunction. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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