| Autor: |
Freer, R. W., Lane, P. A., Martin, T., Whitehouse, C. R., Whitaker, T. J., Williams, G. M., Cullis, A. G., Calcott, P. D. J., Nash, K. D., Buchannan, H., Jones, A. C., Rushworth, S. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 1/15/1996, Vol. 79 Issue 2, p917, 6p, 6 Graphs |
| Abstrakt: |
Presents a study that investigated triisopropyl indium (TIPIn) as an alternative to trimethyl indium for use in chemical-beam epitaxy. Characterization of TIPIn precursors; Details on growth modulated-beam mass spectrometry experiments; Assessment of InGaAs growth and material properties. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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