| Autor: |
Vivet, L., Dubreuil, B., Gibert-Legrand, T., Barthe, M. F. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 1/15/1996, Vol. 79 Issue 2, p1099, 10p, 1 Diagram, 8 Graphs |
| Abstrakt: |
Presents a study that investigated the pulsed laser sputtering of (100)Ga[sub1-x]Al[subx]As (x=0.545) surface with 337 nm photons, starting from threshold for particle emission (a few tens of mJ/cm²) up to about 300 mJ/cm². Photoionization spectrum of Ga, As, and Al species; Time-of-flight measurements of the density of sputtered particles; Scanning electron microscopy and electron microprobe analysis of irradiated spots. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
