Anomalies of ohmic contacts on heteroepitaxial GaAs layers on Si after rapid thermal annealing.
| Autor: | Wilke, K., Budnick, B., Ludwig, M. H., Heymann, G. |
|---|---|
| Předmět: | |
| Zdroj: | Journal of Applied Physics; 1/15/1995, Vol. 77 Issue 2, p653, 4p, 6 Graphs |
| Abstrakt: | Presents a study that reported on resistance and capacity measurements of ohmic contacts which were deposited on heteroepitaxially grown, silicon-doped gallium arsenide layers on silicon substrates. Details of the experiment; Results and discussion; Conclusion. |
| Databáze: | Complementary Index |
| Externí odkaz: |
|