Influence of interfacial copper on the room temperature oxidation of silicon.
| Autor: | Alford, T. L., Jaquez, E. J., Theodore, N. David, Russell, S. W., Diale, M., Adams, D., Anders, Simone |
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| Zdroj: | Journal of Applied Physics; 2/15/1996, Vol. 79 Issue 4, p2074, 5p, 1 Black and White Photograph, 4 Graphs |
| Abstrakt: | Presents a study which described an investigation of room-temperature oxidation of silicon substrates after copper ion implantation. Experimental procedures; Results of the study; Conclusion. |
| Databáze: | Complementary Index |
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