Strain determination and microstructural characterization of 50 keV Sn-ion-implanted Si(001).

Autor:	Sardela, M. R., Turan, R., Willander, M., Hansson, G. V., Hultman, L.
Předmět:	SILICON IONIZATION (Atomic physics) ELECTRON microscopy
Zdroj:	Journal of Applied Physics; 2/15/1995, Vol. 77 Issue 4, p1411, 10p, 4 Diagrams, 6 Graphs
Abstrakt:	Focuses on a study on the structural characterization of Si[sub1-x]Sn[subx] structures fabricated by the ion-implementation technique. Introduction to silicon-based materials; Experimental details; Structural characterization by electron microscopy.
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu