| Autor: |
Goodson, K. E., Käding, O. W., Rösler, M., Zachai, R. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2/15/1995, Vol. 77 Issue 4, p1385, 8p, 1 Black and White Photograph, 2 Diagrams, 2 Charts, 3 Graphs |
| Abstrakt: |
Develops experimental methods that measure the total thermal resistance for conduction normal to diamond layers thinner than five um on silicon substrates, yielding an upper bound for the thermal resistance of the diamond-silicon boundary. Applications of chemical-vapor-deposited diamond; Approaches used to measure smaller resistances by diminishing the unnecessary temperature rise in the substrate; Thermal diffusivities of silicon and diamond. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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