| Autor: |
Christianen, P. C. M., van Hall, P. J., Bluyssen, H. J. A., Leys, M. R., Drost, L., Wolter, J. H. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 12/15/1996, Vol. 80 Issue 12, p6831, 8p, 3 Diagrams, 1 Chart, 8 Graphs |
| Abstrakt: |
Presents a study which discussed the ultrafast carrier dynamics of a metal semiconductor interface. Relation of photoluminescence decay time to carrier from the gallium arsenide depletion region; Mathematical methods for the measurement of transient transport; Discussion on the layer composition of the modified Schottky barrier. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
