Visible wavelength (6470 Å) GaxIn1-xP/GaAs0.66P0.34 quantum wire heterostructures.
| Autor: | Moy, A. M., Chen, A. C., Cheng, K. Y., Chou, L. J., Hsieh, K. C., Tu, C.-W. |
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| Zdroj: | Journal of Applied Physics; 12/15/1996, Vol. 80 Issue 12, p7124, 6p, 1 Diagram, 5 Graphs |
| Abstrakt: | Presents a study which dealt with the fabrication of gallium indium phosphide (GaInP) quantum wires. Discussion on the strain-induced lateral-layer ordering mechanism; Integration of laterally confined structures in GaInP; Experimental results. |
| Databáze: | Complementary Index |
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