Nonlinear characteristics induced by accumulation of photogenerated holes in GaAs/GaAlAs multi-quantum well structure under weak photoexcitation.

Autor: Matsui, Y., Kusumi, Y.
Předmět:
Zdroj: Journal of Applied Physics; 12/15/1995, Vol. 78 Issue 12, p7137, 6p
Abstrakt: Discusses the linearity between photoluminescence (PL) characteristics and incident laser power on the basis of an electric field distortion induced by photoexcitation in GaAs/GaAlAs multi-quantum well structure. Sample preparation; Dependencies of the PL peak intensity and wavelengths at half maxima on the incident laser power; Discussion.
Databáze: Complementary Index