CoSi2/Si1-xGex/Si(001) heterostructures formed through different reaction routes: Silicidation-induced strain relaxation, defect formation, and interlayer diffusion.

Autor: Nur, O., Willander, M., Hultman, L., Radamson, H. H., Hansson, G. V., Sardela, M. R., Greene, J. E.
Předmět:
Zdroj: Journal of Applied Physics; 12/15/1995, Vol. 78 Issue 12, p7063, 7p, 4 Black and White Photographs, 2 Diagrams, 3 Graphs
Abstrakt: Presents information on a study which investigated the microstructure and microchemistry of CoSi[sub2]/Si[sub1-x]Ge/Si(001) heterostructures using a combination of high-resolution cross-sectional transmission electron microscopy, high-resolution x-ray diffraction and secondary-ion mass spectroscopy. Experimental procedure; Results and discussion; Conclusions.
Databáze: Complementary Index