| Autor: |
Schlatmann, R., Keppel, A., Xue, Y., Verhoeven, J., Marée, C. H. M., Habraken, F. H. P. M. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 8/15/1996, Vol. 80 Issue 4, p2121, 6p |
| Abstrakt: |
Presents a study that investigated increased optical contrast of molybdenum/silicon (Si) multilayers through low energy hydrogen ion implantation of amorphous Si layers. Result of hydrogen implantation on silicon atomic density; Peak reflectivity of a few multilayers with reduced-density of Si layers, for different wavelengths and absorber materials; Observations on the effect of hydrogen&sup+1; ion bombardment. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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