SiC formation at the interface of polyimide Langmuir–Blodgett film and silicon.

Autor: Ji, Mingrong, Zhu, Jingsheng, Ma, Maosheng, Wu, Jianxin, Liu, Xianming, Jin, Bangkun, Yang, Beifang, He, Pingsheng, Ruan, Yaozhong
Předmět:
Zdroj: Journal of Applied Physics; 8/15/1996, Vol. 80 Issue 4, p2471, 4p, 2 Graphs
Abstrakt: Focuses on a study which explored an x-ray photoelectron spectroscopic analysis of the interaction between polyimide film made by the Langmuir-Blodgett method and silicon. Background on silicon carbide; Description of the experimental setup; Results and discussion.
Databáze: Complementary Index