| Autor: |
Kwon, S. D., Kwon, Ho Ki, Choe, Byung-Doo, Lim, H., Lee, J. Y. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 8/15/1995, Vol. 78 Issue 4, p2482, 7p |
| Abstrakt: |
Presents a study on the interface properties of Schottky contacts on nitrogen-hydrogen-sulfur-treated indium (In)-gallium (Ga)-phosphorus (P). Effects of sulfur treatment on Schottky barrier height; Use of capacitance-voltage and current-voltage measurements; Discussion on ternary compound semiconductor InGaP. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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