| Autor: |
Pananakakis, G., Ghibaudo, G., Kies, R., Papadas, C. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 8/15/1995, Vol. 78 Issue 4, p2635, 7p |
| Abstrakt: |
Presents a comprehensive study of the temperature dependence of the Fowler-Nordheim (F-N) tunnel emission in a metal-oxide-semiconductor structure. Influence of the electron concentration of a degenerate semiconductor on the amplitude of F-N current; Use of Sommerfeld expansion; Importance of F-N tunnel emission phenomenon in metal-oxide-semiconductor structures. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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