Material properties of low pressure chemical vapor deposited silicon nitride for modeling and calibrating the simulation of advanced isolation structures.

Autor: Smeys, Peter I. L., Griffin, Peter B., Saraswat, Krishna C.
Předmět:
Zdroj: Journal of Applied Physics; 8/15/1995, Vol. 78 Issue 4, p2837, 6p
Abstrakt: Presents a study that focused on the increasing cost and complexity of semiconductor process development which led to the widespread use of multidimensional semiconductor process simulators. Use of Raman spectroscopy; Background on integrated circuit technologies; Importance of silicon nitride films tp the semiconductor industry.
Databáze: Complementary Index