| Autor: |
Chan, Simon S. M., Peucheret, Christophe, McKeag, Robert D., Jackman, Richard B., Johnston, Colin, Chalker, Paul R. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 8/15/1995, Vol. 78 Issue 4, p2877, 3p, 2 Graphs |
| Abstrakt: |
Investigates aluminum (Al) and nickel (Ni) contact metallizations on polycrystalline, randomly oriented diamond films of varying dopant concentrations. Application of Hall measurements; Means to characterize the effect of material doping on the electrical behavior of Al and Ni contacts; Use of standard lithographic techniques. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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